| PART |
Description |
Maker |
| AM29BDD160G |
(16 Megabit (1 M x 16-bit/512 K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Wr
From old datasheet system
|
AMD Inc
|
| AM29BDD160GB17CPBE AM29BDD160GB17CPBF AM29BDD160GB |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
|
Advanced Micro Devices, Inc.
|
| S29CD016G0MFFA202 S29CD016G0MFAA212 S29CD016G0JFAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位）6兆位12k × 32的位），2.5伏，只有突发模式，双启动，同步读/写闪存与VersatileI内存/输出
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位）6兆位512k × 32的位），2.5伏，只有突发模式，双启动，同步读/写闪存与VersatileI内存/输出
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80
|
Spansion Inc.
Spansion, Inc.
|
| AM29BDS320G |
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
|
Advanced Micro Devices
|
| AM29N323DT11AWKI AM29N323D |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
|
AMD[Advanced Micro Devices]
|
| AM29BDS640G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory (Advan
From old datasheet system
|
AMD Inc
|
| S29WS128P0PBAW000 S29WS512P S29WS512P0LBAW000 S29W |
MirrorBit垄莽 Flash Family 512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory
MirrorBit? Flash Family 512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory
|
SPANSION
|
| CY7C1261V18 CY7C1261V18-300BZC CY7C1261V18-300BZI |
36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS06 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写，突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
|
Spansion Inc.
Spansion, Inc.
|
| CY7C1241V18-300BZXC CY7C1256V18 CY7C1256V18-300BZC |
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
